BU1006-E3 datasheet(2/6 Pages) VISHAY

Il numero della parte	BU1006-E3

Spiegazioni elettronici	Bridge Rectifiers

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Produttore elettronici	VISHAY [Vishay Siliconix]

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BU1006-E3, BU1008-E3, BU1010-E3

www.vishay.com

Vishay General Semiconductor

Revision: 16-Aug-13

2

Document Number: 84801

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

Notes

(1) With 60 W air cooled heatsink

(2) Without heatsink, free air

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise specified)

Fig. 1 - Derating Curve Output Rectified Current

Fig. 2 - Forward Current Derating Curve

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

MAX.

UNIT

Maximum instantaneous forward



voltage per diode (1)

IF = 5.0 A

TA = 25 °C

VF

0.98

1.05

V

TA = 125 °C

0.88

0.95

Maximum reverse current per diode

rated VR

TA = 25 °C

IR

-5.0

μA

TA = 125 °C

64

250

Typical junction capacitance per diode

4.0 V, 1 MHz

CJ

43

-

pF

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

BU1006

BU1008

BU1010

UNIT

Typical thermal resistance

RJC (1)

3.0

°C/W

RJA (2)

20

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

BU1006-E3/45

4.55

45

20

Tube

BU1006-E3/51

4.55

51

250

Paper tray

BU10065S-E3/45

4.55

45

20

Tube

0

60

120

160

0

2

4

6

8

12

Case Temperature (°C)

With Heatsink

Sine-Wave, R-Load

T

C Measured at Device Bottom

T

C

T

C

10

20

80

140

40

100

0

1

2

3

4

Ambient Temperature (°C)

0

50

25

75

100

125

150

Without Heatsink

Sine-Wave, R-Load

Free Air, T

A

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