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2N1597 Scheda tecnica(PDF) 1 Page - List of Unclassifed Manufacturers

Il numero della parte 2N1597
Spiegazioni elettronici  SILICON THYRISTOR(low-current silicon controlled rectifiers in a three-lead package ideal for printed-circuit)
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2N1597 Scheda tecnica(HTML) 1 Page - List of Unclassifed Manufacturers

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COMSET SEMICONDUCTORS
1/2
2N1595 thru 2N1599
SILICON THYRISTOR
Industrial-type, low-current silicon controlled rectifiers
in a three-lead package ideal for printed-circuit applications.
Current handling capability of 1.6 amperes at junction temperetures to 125°C
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted
Symbol
Ratings
2N1595
2N1596
2N1597
2N1598
2N1599
VRSM(REP)
Peak reverse blocking voltage *
50
100
200
300
400
V
IT(RMS)
Forward Current RMS (all conduction
angles)
1.6
Amp
ITSM
Peak Surge Current
(One Cycle, 60Hz, TJ=-65 to +125°C)
15
Amp
PGM
Peak Gate Power – Forward
0.1
W
PG(AV)
Average Gate Power - Forward
0.01
W
IGM
Peak Gate Current – Forward
0.1
Amp
VGFM
Peak Gate Voltage - Forward
10
V
VGRM
Peak Gate Voltage - Reverse
10
V
TJ
Operating
Junction
Temperature
Range
-65 to +125
TSTG
Storage Temperature Range
-65 to +150
°C
ELECTRICAL CHARACTERISTICS
TJ=25°C unless otherwise noted, RGK=1000
Symbol
Ratings
2N1595
2N1596
2N1597
2N1598
2N1599
VDRM
Peak Forward Blocking
Voltage *
Min :
50
100
200
300
400
V
IRRM
Peak Reverse Blocking Current
(Rated
VDRM, TJ =125°C)
Max : 1.0
mA


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