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2SK1819 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SK1819 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel MOSFET Transistor 2SK1819 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA 450 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=10mA 2.1 4.0 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 2.5A 0.78 2.5 Ω IGSS Gate-Body Leakage Current VGS= ±25V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS= 450V; VGS= 0 500 µA Ciss Input capacitance VDS=25V; VGS=0V; fT=1MHz 500 750 pF Crss Reverse transfer capacitance 40 60 Coss Output capacitance 80 120 tr Rise time VGS=10V; ID=5A; VDD=300V; RL=25Ω 30 45 ns ton Turn-on time 25 40 tf Fall time 50 75 toff Turn-off time 110 170 PDF pdfFactory Pro www.fineprint.cn |
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