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MP4503 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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MP4503 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 8 page MP4503 2002-11-20 3 Electrical Characteristics (Ta = 25°C) (PNP transistor) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −100 V, IE = 0 A ― ― −20 µA Collector cut-off current ICEO VCE = −80 V, IB = 0 A ― ― −20 µA Emitter cut-off current IEBO VEB = −5 V, IC = 0 A −0.5 ― −2.5 mA Collector-base breakdown voltage V (BR) CBO IC = −1 mA, IE = 0 A −100 ― ― V Collector-emitter breakdown voltage V (BR) CEO IC = −10 mA, IB = 0 A −80 ― ― V hFE (1) VCE = −2 V, IC = −1 A 2000 ― ― DC current gain hFE (2) VCE = −2 V, IC = −3 A 1000 ― ― ― Collector-emitter VCE (sat) IC = −3 A, IB = −6 mA ― ― −1.5 Saturation voltage Base-emitter VBE (sat) IC = −3 A, IB = −6 mA ― ― −2.0 V Transition frequency fT VCE = −2 V, IC = −0.5 A ― 40 ― MHz Collector output capacitance Cob VCB = −10 V, IE = 0 A, f = 1 MHz ― 55 ― pF Turn-on time ton ― 0.15 ― Storage time tstg ― 0.80 ― Switching time Fall time tf −IB1 = IB2 = 6 mA, duty cycle ≤ 1% ― 0.40 ― µs Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward current IFM ― ― ― 4 A Surge current IFSM t = 1 s, 1 shot ― ― 6 A Forward voltage VF IF = 1 A, IB = 0 A ― ― 2.0 V Reverse recovery time trr ― 1.0 ― µs Reverse recovery charge Qrr IF = 4 A, VBE = 3 V, dIF/dt = −50 A/µs ― 8 ― µC VCC = −30 V Output IB1 IB2 Input 20 µs |
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