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MP4503 Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor

Il numero della parte MP4503
Spiegazioni elettronici  High Power Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MP4503 Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor

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MP4503
2002-11-20
3
Electrical Characteristics (Ta = 25°C) (PNP transistor)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = −100 V, IE = 0 A
−20
µA
Collector cut-off current
ICEO
VCE = −80 V, IB = 0 A
−20
µA
Emitter cut-off current
IEBO
VEB = −5 V, IC = 0 A
−0.5
−2.5
mA
Collector-base breakdown voltage
V (BR) CBO
IC = −1 mA, IE = 0 A
−100
V
Collector-emitter breakdown voltage
V (BR) CEO
IC = −10 mA, IB = 0 A
−80
V
hFE (1)
VCE = −2 V, IC = −1 A
2000
DC current gain
hFE (2)
VCE = −2 V, IC = −3 A
1000
Collector-emitter
VCE (sat)
IC = −3 A, IB = −6 mA
−1.5
Saturation voltage
Base-emitter
VBE (sat)
IC = −3 A, IB = −6 mA
−2.0
V
Transition frequency
fT
VCE = −2 V, IC = −0.5 A
40
MHz
Collector output capacitance
Cob
VCB = −10 V, IE = 0 A, f = 1 MHz
55
pF
Turn-on time
ton
0.15
Storage time
tstg
0.80
Switching time
Fall time
tf
−IB1 = IB2 = 6 mA, duty cycle ≤ 1%
0.40
µs
Emitter-Collector Diode Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward current
IFM
4
A
Surge current
IFSM
t = 1 s, 1 shot
6
A
Forward voltage
VF
IF = 1 A, IB = 0 A
2.0
V
Reverse recovery time
trr
1.0
µs
Reverse recovery charge
Qrr
IF = 4 A, VBE = 3 V, dIF/dt = −50 A/µs
8
µC
VCC = −30 V
Output
IB1
IB2
Input
20 µs


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