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BY329-1000 Scheda tecnica(PDF) 1 Page - NXP Semiconductors |
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BY329-1000 Scheda tecnica(HTML) 1 Page - NXP Semiconductors |
1 / 6 page Philips Semiconductors Product specification Rectifier diodes BY329 series fast, soft-recovery FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 800 V/ 1000 V/ 1200 V • Fast switching • Soft recovery characteristic I F(AV) = 8 A • High thermal cycling performance • Low thermal resistance I FSM ≤ 75 A t rr ≤ 135 ns GENERAL DESCRIPTION PINNING SOD59 (TO220AC) Glass-passivated double diffused PIN DESCRIPTION rectifier diodes featuring low forward voltage drop, fast reverse 1 cathode recovery and soft recovery characteristic. The devices are 2 anode intended for use in TV receivers, monitors and switched mode power tab cathode supplies. The BY329 series is supplied in the conventional leaded SOD59 (TO220AC) package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BY329 -800 -1000 -1200 V RSM Peak non-repetitive reverse - 800 1000 1200 V voltage V RRM Peak repetitive reverse voltage - 800 1000 1200 V V RWM Crest working reverse voltage - 600 800 1000 V I F(AV) Average forward current 1 square wave; δ = 0.5; - 8 A T mb ≤ 122 ˚C sinusoidal; a = 1.57; - 7 A T mb ≤ 125 ˚C I F(RMS) RMS forward current - 11 A I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 16 A T mb ≤ 122 ˚C I FSM Non-repetitive peak forward t = 10 ms - 75 A current. t = 8.3 ms - 82 A sinusoidal; T j = 150 ˚C prior to surge; with reapplied V RWM(max) I 2tI2t for fusing t = 10 ms - 28 A 2s T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C k a 12 1 tab 2 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.200 |
Codice articolo simile - BY329-1000 |
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Descrizione simile - BY329-1000 |
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