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IRF5805PBF Scheda tecnica(PDF) 2 Page - International Rectifier

Il numero della parte IRF5805PBF
Spiegazioni elettronici  Ultra Low On-Resistance
Download  9 Pages
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Produttore elettronici  IRF [International Rectifier]
Homepage  http://www.irf.com
Logo IRF - International Rectifier

IRF5805PBF Scheda tecnica(HTML) 2 Page - International Rectifier

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IRF5805PbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
–––
––– -1.2
V
TJ = 25°C, IS = -2.0A, VGS = 0V
‚
trr
Reverse Recovery Time
–––
19
29
ns
TJ = 25°C, IF = -2.0A
Qrr
Reverse Recovery Charge
–––
16
24
nC
di/dt = -100A/µs
‚
Source-Drain Ratings and Characteristics
––– –––
––– –––
-15
-2.0
A
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.02 –––
V/°C Reference to 25°C, ID = -1mA
––– ––– 0.098
VGS = -10V, ID = -3.8A
‚
––– ––– 0.165
VGS = -4.5V, ID = -3.0A
‚
VGS(th)
Gate Threshold Voltage
-1.0 ––– -2.5
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
3.5
–––
–––
S
VDS = -10V, ID = -3.8A
––– –––
-15
VDS = -24V, VGS = 0V
––– –––
-25
VDS = -24V, VGS = 0V, TJ = 70°C
Gate-to-Source Forward Leakage
––– ––– -100
VGS = -20V
Gate-to-Source Reverse Leakage
––– –––
100
VGS = 20V
Qg
Total Gate Charge
–––
11
17
ID = -3.8A
Qgs
Gate-to-Source Charge
–––
2.3
–––
nC
VDS = -15V
Qgd
Gate-to-Drain ("Miller") Charge
–––
1.5
–––
VGS = -10V
td(on)
Turn-On Delay Time
–––
11
17
VDD = -15V, VGS = -10V
tr
Rise Time
–––
14
21
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
90
135
RG = 6.0Ω
tf
Fall Time
–––
49
74
RD = 15Ω
‚
Ciss
Input Capacitance
––– 511
–––
VGS = 0V
Coss
Output Capacitance
–––
79
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
50
–––
ƒ = 1.0MHz
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
Static Drain-to-Source On-Resistance
IDSS
Drain-to-Source Leakage Current
nA
ns
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.
S
D
G
ƒ Surface mounted on 1 in square Cu board, t ≤ 10sec.


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