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2SJ171 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SJ171 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc & iscsemi is registered trademark 2 isc P-Channel Mosfet Transistor 2SJ171 ·ELECTRICAL CHARACTERISTICS (T C=25℃) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA -50 V VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA -2.0 -4 V RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -6.5A 0.35 Ω IGSS Gate Source Leakage Current VGS= -16V;VDS= 0 -10 uA IDSS Zero Gate Voltage Drain Current VDS= -50V,VGS= 0 -0.25 mA VSD Diode Forward Voltage IF=-9.7 A;VGS= 0 -1.2 V PDF pdfFactory Pro www.fineprint.cn |
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