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2SD1371 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1371 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2SD1371 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.5 V IEBO Emitter Cutoff Current VEB= 7V; IC= 0 0.1 mA ICBO Collector Cutoff Current VCB= 300V; VBE= 0 100 μ A hFE DC Current Gain IC= 0.3A; VCE= 5V 35 fT Current-Gain—Bandwidth Product IC= 0.3A; VCE= 10V 5 MHz |
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