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MTB080P06N3-0-T1-G Scheda tecnica(PDF) 4 Page - Cystech Electonics Corp. |
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MTB080P06N3-0-T1-G Scheda tecnica(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C069N3 Issued Date : 2016.03.24 Revised Date : Page No. : 4/ 9 MTB080P06N3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 2 4 6 8 10 012345 -VDS, Drain-Source Voltage(V) 10V,9V,8V,7V,6V,5V, 4.5V 4V -VGS=3V 3.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0 20 40 60 80 100 120 140 160 180 200 0.01 0.1 1 10 -ID, Drain Current(A) VGS=-10V VGS=-4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.0 1.2 024 68 1 -IDR, Reverse Drain Current(A) 0 Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 100 200 300 400 500 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=-10V, ID=-2A RDS(ON)@Tj=25°C : 80 mΩ typ -VGS, Gate-Source Voltage(V) ID=-2A |
Codice articolo simile - MTB080P06N3-0-T1-G |
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Descrizione simile - MTB080P06N3-0-T1-G |
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