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MTB080P06J3 Scheda tecnica(PDF) 2 Page - Cystech Electonics Corp. |
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MTB080P06J3 Scheda tecnica(HTML) 2 Page - Cystech Electonics Corp. |
2 / 9 page CYStech Electronics Corp. Spec. No. : C069J3 Issued Date : 2016.03.16 Revised Date : Page No. : 2/ 9 MTB080P06J3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Unit Drain-Source Voltage VDS -60 Gate-Source Voltage VGS ± 20 V Continuous Drain Current @TC=25 °C, VGS=-10V -12.5 Continuous Drain Current @TC=100 °C, VGS=-10V ID -7.9 Continuous Drain Current @TA=25 °C, VGS=-10V (Note 2) -3.5 Continuous Drain Current @TA=70 °C, VGS=-10V (Note 2) IDSM -2.8 Pulsed Drain Current (Note 3) IDM -45 Avalanche Current (Note 3) IAS -12.5 A Avalanche Energy @ L=1mH, ID=-11A, VDD=-50V (Note 2) EAS 60 mJ TC=25 °C (Note 1) 31 TC=100 °C (Note 1) PD 12 TA=25 °C (Note 2) 2.5 Total Power Dissipation TA=70 °C (Note 2) PDSM 1.6 W Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 °C * 100% UIS testing in condition of VD=-15V, L=1mH, VG=-10V, IAS=-9A, Rated VDS=-60V Thermal Data Parameter Symbol Typical Maximum Unit Thermal Resistance, Junction-to-case RθJC 3.6 4 Thermal Resistance, Junction-to-ambient, t≤10s (Note 2) 15 18 Thermal Resistance, Junction-to-ambient, steady state RθJA 40 50 °C/W Note : 1 .The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design. 3 . Pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. |
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