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MTB020N03KL3 Scheda tecnica(PDF) 5 Page - Cystech Electonics Corp.

Il numero della parte MTB020N03KL3
Spiegazioni elettronici  30V N-channel Enhancement Mode MOSFET
Download  9 Pages
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Produttore elettronici  CYSTEKEC [Cystech Electonics Corp.]
Homepage  http://www.cystekec.com
Logo CYSTEKEC - Cystech Electonics Corp.

MTB020N03KL3 Scheda tecnica(HTML) 5 Page - Cystech Electonics Corp.

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CYStech Electronics Corp.
Spec. No. : C143L3
Issued Date : 2016.01.22
Revised Date : 2016.02.22
Page No. : 5/9
MTB020N03KL3
CYStek Product Specification
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10
100
1000
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
C oss
Ciss
Crss
Threshold Voltage vs Junction Tempearture
0.4
0.6
0.8
1
1.2
1.4
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
ID=250
μA
ID=1mA
Forward Transfer Admittance vs Drain Current
0.01
0.1
1
10
0.001
0.01
0.1
1
10
ID, Drain Current(A)
Ta=25°C
Pulsed
VDS=10V
VDS=15V
Gate Charge Characteristics
0
2
4
6
8
10
02
46
8
10
12
14
Qg, Total Gate Charge(nC)
ID=4A
VDS=24V
VDS=15V
Maximum Safe Operating Area
0.01
0.1
1
10
100
0.1
1
10
100
VDS, Drain-Source Voltage(V)
TA=25°C, Tj=150°C
VGS=10V, RθJA=45°C/W
Single Pulse
DC
100ms
RDSON
Limited
100
μs
1ms
10
μs
10ms
Maximum Drain Current vs Junction Temperature
0
1
2
3
4
5
6
7
8
9
25
50
75
100
125
150
175
Tj, Junction Temperature(°C)
TA=25°C, VGS=10V, RθJA=45°C/W


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