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MTB020N03KL3 Scheda tecnica(PDF) 5 Page - Cystech Electonics Corp. |
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MTB020N03KL3 Scheda tecnica(HTML) 5 Page - Cystech Electonics Corp. |
5 / 9 page CYStech Electronics Corp. Spec. No. : C143L3 Issued Date : 2016.01.22 Revised Date : 2016.02.22 Page No. : 5/9 MTB020N03KL3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 10 100 1000 0 5 10 15 20 25 30 VDS, Drain-Source Voltage(V) C oss Ciss Crss Threshold Voltage vs Junction Tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250 μA ID=1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 ID, Drain Current(A) Ta=25°C Pulsed VDS=10V VDS=15V Gate Charge Characteristics 0 2 4 6 8 10 02 46 8 10 12 14 Qg, Total Gate Charge(nC) ID=4A VDS=24V VDS=15V Maximum Safe Operating Area 0.01 0.1 1 10 100 0.1 1 10 100 VDS, Drain-Source Voltage(V) TA=25°C, Tj=150°C VGS=10V, RθJA=45°C/W Single Pulse DC 100ms RDSON Limited 100 μs 1ms 10 μs 10ms Maximum Drain Current vs Junction Temperature 0 1 2 3 4 5 6 7 8 9 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) TA=25°C, VGS=10V, RθJA=45°C/W |
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