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2SC3747 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3747 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn 2 isc Silicon NPN Power Transistor 2SC3747 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3.5A; IB= 0.175A 0.4 V ICBO Collector Cutoff Current VCB= 40V ; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 100 μA hFE DC Current Gain IC= 1A ; VCE= 2V 70 280 fT Current-Gain—Bandwidth Product IC= 1A ; VCE= 5V 100 MHz Switching times ton Turn-on Time IC= 3A , IB1= -IB2= 0.15A; RL= 6.67Ω; VCC= 20V 0.1 μs tstg Storage Time 0.5 μs tf Fall Time 0.1 μs hFE Classifications Q R S 70-140 100-200 140-280 |
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