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2SC3349 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC3349 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistor 2SC3449 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 500V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base voltage 7 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak 14 A IB Base Current-Continuous 3 A PC Collector Power Dissipation @ TC=25℃ 80 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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