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BF822 Scheda tecnica(PDF) 1 Page - Diotec Semiconductor

Il numero della parte BF822
Spiegazioni elettronici  Surface mount Si-Epitaxial PlanarTransistors
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Produttore elettronici  DIOTEC [Diotec Semiconductor]
Homepage  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BF822 Scheda tecnica(HTML) 1 Page - Diotec Semiconductor

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1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses t
p = 300
:s, duty cycle # 2% – Gemessen mit Impulsen t
p = 300
:s, Schaltverhältnis # 2%
10
01.11.2003
4
3
2
1
3
±0.1
6.5
±0.2
0.7
3.25
2.3
1.65
BF 720, BF 722
High Voltage Transistors
NPN
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung
1.5 W
Plastic case
SOT-223
Kunststoffgehäuse
Weight approx. – Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B
2, 4 = C
3 = E
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (T
A = 25
/C)
Grenzwerte (T
A = 25
/C)
BF 720
BF 722
Collector-Emitter-voltage
B open
V
CE0
300 V
250 V
Collector-Base-voltage
E open
V
CB0
300 V
250 V
Emitter-Base-voltage
C open
V
EB0
5 V
Power dissipation – Verlustleistung
P
tot
1.5 W 1)
Collector current – Kollektorstrom (dc)
I
C
100 mA
Peak Collector current – Kollektor-Spitzenstrom
I
CM
200 mA
Peak Base current – Basis-Spitzenstrom
I
BM
100 mA
Junction temperature – Sperrschichttemperatur
T
j
150
/C
Storage temperature – Lagerungstemperatur
T
S
- 65…+ 150
/C
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
I
E = 0, VCB = 200 V
I
CB0
10 nA
I
E = 0, VCB = 200 V, Tj = 150
/CI
CB0
10
:A
Emitter-Base cutoff current – Emitterreststrom
I
C = 0, VEB = 5 V
I
EB0
50 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
I
C = 30 mA, IB = 5 mA
V
CEsat
600 mV


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