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BCP29 Scheda tecnica(PDF) 2 Page - Diotec Semiconductor

Il numero della parte BCP29
Spiegazioni elettronici  Surface mount Si-Epitaxial PlanarTransistors
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Produttore elettronici  DIOTEC [Diotec Semiconductor]
Homepage  http://www.diotec.com
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BCP29 Scheda tecnica(HTML) 2 Page - Diotec Semiconductor

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1) Tested with pulses t
p = 300
:s, duty cycle # 2% – Gemessen mit Impulsen t
p = 300
:s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
5
01.11.2003
4=2
3
2
1
Darlington Transistors
BCP 29, BCP 49
Characteristics (T
j = 25
/C)
Kennwerte (T
j = 25
/C)
Min.
Typ.
Max.
Collector saturation volt. – Kollektor-Sättigungsspg. 1)
I
C = 100 mA, IB = 0.1 mA
V
CEsat
1 V
Base saturation voltage – Basis-Sättigungsspannung 1)
I
C = 100 mA, IB = 0.1 mA
V
BEsat
1.5 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
V
CE = 1 V, IC = 0.1 mA
BCP 29
h
FE
4000
BCP 49
h
FE
2000
V
CE = 5 V, IC = 10 mA
BCP 29
h
FE
10000
BCP 49
h
FE
4000
V
CE = 5 V, IC = 100 mA
BCP 29
h
FE
20000
BCP 49
h
FE
10000
V
CE = 5 V, IC = 500 mA
BCP 29
h
FE
4000
BCP 49
h
FE
2000
Gain-Bandwidth Product – Transitfrequenz
V
CE = 5 V, IC = 50 mA, f = 100 MHz
f
T
200 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
V
CB = 10 V, IE = ie = 0, f = 1 MHz
C
CB0
6.5 pF
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
R
thA
93 K/W 2)
junction to soldering point – Sperrschicht zu Lötpad
R
thS
17 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BCP 28, BCP 48
Pinning – Anschlußbelegung


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