BC817W datasheet(1/2 Pages) DIOTEC

Il numero della parte	BC817W

Spiegazioni elettronici	Surface mount Si-Epitaxial PlanarTransistors

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Produttore elettronici	DIOTEC [Diotec Semiconductor]

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1) Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß

8

01.11.2003

12

3

Type

Code

2±0.1

1±0.1

0.3

1.3

BC 817W / BC 818W

General Purpose Transistors

NPN

Surface mount Si-Epitaxial PlanarTransistors

Si-Epitaxial PlanarTransistoren für die Oberflächenmontage

NPN

Power dissipation – Verlustleistung

225 mW

Plastic case

SOT-323

Kunststoffgehäuse

Weight approx. – Gewicht ca.

0.01 g

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

Dimensions / Maße in mm

1 = B

2 = E

3 = C

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Maximum ratings (T

A = 25

/C)

Grenzwerte (T

A = 25

/C)

BC 817W

BC 818W

Collector-Emitter-voltage

B open

V

CE0

45 V

25 V

Collector-Emitter-voltage

B shorted

V

CES

50 V

30 V

Collector-Base-voltage

E open

V

CB0

50 V

30 V

Emitter-Base-voltage

C open

V

EB0

5 V

Power dissipation – Verlustleistung

P

tot

225 mW 1)

Collector current – Kollektorstrom (DC)

I

C

500 mA

Peak Coll. current – Kollektor-Spitzenstrom

I

CM

1000 mA

Peak Base current – Basis-Spitzenstrom

I

BM

200 mA

Peak Emitter current – Emitter-Spitzenstrom

- I

EM

1000 mA

Junction temperature – Sperrschichttemperatur

T

j

150

/C

Storage temperature – Lagerungstemperatur

T

S

- 65…+ 150

/C

Characteristics, T

j = 25

/C

Kennwerte, T

j = 25

/C

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis

V

CE = 1 V, IC = 100 mA

BC817W

BC818W

h

FE

100

–

600

V

CE = 1 V, IC = 500 mA

h

FE

40

–

V

CE = 1 V, IC = 100 mA

Group -16W h

FE

100

160

250

Group -25W h

FE

160

250

400

Group -40W h

FE

250

400

600

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