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CD4066BM Scheda tecnica(PDF) 2 Page - National Semiconductor (TI) |
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CD4066BM Scheda tecnica(HTML) 2 Page - National Semiconductor (TI) |
2 / 8 page Absolute Maximum Ratings (Notes12) If MilitaryAerospace specified devices are required please contact the National Semiconductor Sales OfficeDistributors for availability and specifications Supply Voltage (VDD) b 05V to a18V Input Voltage (VIN) b 05V to VDDa05V Storage Temperature Range (TS) b 65 Cto a150 C Power Dissipation (PD) Dual-In-Line 700 mW Small Outline 500 mW Lead Temperature (TL) (Soldering 10 seconds) 300 C Recommended Operating Conditions (Note 2) Supply Voltage (VDD) 3Vto15V Input Voltage (VIN) 0VtoVDD Operating Temperature Range (TA) CD4066BM b 55 Cto a125 C CD4066BC b 40 Cto a85 C DC Electrical Characteristics CD4066BM (Note 2) Symbol Parameter Conditions b 55 C a 25 C a 125 C Units Min Max Min Typ Max Min Max IDD Quiescent Device Current VDDe5V 025 001 025 75 m A VDDe10V 05 001 05 15 m A VDDe15V 10 001 10 30 m A SIGNAL INPUTS AND OUTPUTS RON ‘‘ON’’ Resistance RLe10 kX to VDDbVSS 2 VCeVDD VISeVSS to VDD VDDe5V 800 270 1050 1300 X VDDe10V 310 120 400 550 X VDDe15V 200 80 240 320 X D RON D ‘‘ON’’ Resistance RLe10 kX to VDDbVSS 2 Between any 2 of VCeVDD VISeVSS to VDD 4 Switches VDDe10V 10 X VDDe15V 5 X IIS Input or Output Leakage VCe0 g 50 g 01 g 50 g 500 nA Switch ‘‘OFF’’ VISe15V and 0V VOSe0V and 15V CONTROL INPUTS VILC Low Level Input Voltage VISeVSS and VDD VOSeVDD and VSS IISe g10 mA VDDe5V 15 225 15 15 V VDDe10V 30 45 30 30 V VDDe15V 40 675 40 40 V VIHC High Level Input Voltage VDDe5V 35 35 275 35 V VDDe10V (see note 6) 70 70 55 70 V VDDe15V 110 110 825 110 V IIN Input Current VDDbVSSe15V g 01 g 10b5 g 01 g 10 m A VDDtVIStVSS VDDtVCtVSS DC Electrical Characteristics CD4066BC (Note 2) Symbol Parameter Conditions b 40 C a 25 C a 85 C Units Min Max Min Typ Max Min Max IDD Quiescent Device Current VDDe5V 10 001 10 75 m A VDDe10V 20 001 20 15 m A VDDe15V 40 001 40 30 m A 2 |
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