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ES1DF Scheda tecnica(PDF) 1 Page - Taiwan Semiconductor Company, Ltd

Il numero della parte ES1DF
Spiegazioni elettronici  1A, 200V - 600V Surface Mount Super Fast Rectifiers
Download  4 Pages
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Produttore elettronici  TSC [Taiwan Semiconductor Company, Ltd]
Homepage  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

ES1DF Scheda tecnica(HTML) 1 Page - Taiwan Semiconductor Company, Ltd

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CREAT BY ART
- Glass passivated junction chip
- Ideal for automated placement
- Low profile package
- Low power loss, high efficiency
- Halogen-free according to IEC 61249-2-21
Molding compound: UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
SYMBOL
ES1DF
ES1GF
ES1JF
UNIT
VRRM
200
400
600
V
VRMS
140
280
420
V
VDC
200
400
600
V
IF(AV)
A
CJ
pF
trr
ns
TJ
°C
TSTG
°C
Version: B1604
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A=25°C unless otherwise noted)
ES1DF - ES1JF
1A, 200V - 600V Surface Mount Super Fast Rectifiers
FEATURES
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAF DATA
SMAF
μA
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
1.70
1
30
1.00
1.30
Maximum reverse recovery time (Note 3)
9
RθJL
RθJA
Maximum reverse current @ rated VR
TJ=25°C
TJ=125°C
IR
Case: SMAF
Maximum repetitive peak reverse voltage
PARAMETER
Polarity: Indicated by cathode band
Weight: 35 mg (approximately)
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A
VF
V
°C/W
100
35
IFSM
Typical junction capacitance (Note 2)
Typical thermal resistance
Note 3: Test conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Taiwan Semiconductor
35
85
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
- 55 to +150
- 55 to +150
5
Note 2: Measured at 1 MHz and applied VR=4.0 V


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