1SS401

2014-03-01

1

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type

1SS401

High Speed Switching Applications

Low forward voltage

Low reverse current

Small total capacitance

Characteristic

Symbol

Rating

Unit

Maximum (peak) reverse voltage

25

V

Reverse voltage

20

V

Maximum (peak) forward current

700

mA

Average forward current

300

mA

Power dissipation

P

100

mW

Junction temperature

125

°C

Storage temperature range

−55 to 125

°C

Operating temperature range

−40 to 100

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Characteristic

Symbol

Test

Circuit

Test Condition

Min

Typ.

Max

Unit

―

―

0.16

―

―

―

0.22

―

Forward voltage

―

―

0.38

0.45

V

Reverse current

―

―

―

50

μA

Total capacitance

―

―

46

―

pF

Marking

JEDEC

―

JEITA

SC-70

TOSHIBA

1-2P1D

Weigh: 0.006 g(typ.)

Unit: mm

Start of commercial production

1999-03