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TLP763J Scheda tecnica(PDF) 3 Page - Toshiba Semiconductor |
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TLP763J Scheda tecnica(HTML) 3 Page - Toshiba Semiconductor |
3 / 5 page TLP763J 2014-09-22 3 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.15 1.3 V Reverse current IR VR = 5 V ― ― 10 μA Capacitance CT VF = 0, f = 1 MHz ― 30 ― pF Peak off −state current IDRM VDRM = 600 V ― 10 1000 nA Peak on −state voltage VTM ITM = 100 mA ― 1.7 3.0 V Holding current IH ― ― 0.6 ― mA Critical rate of rise of off −state voltage dv / dt Vin = 240 V, Ta = 85°C ― 500 ― V/μs Critical rate of rise of commutating voltage dv / dt (c) Vin = 60Vrms , IT = 15 mA ― 0.2 ― V/μs Coupled Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Trigger LED current IFT VT = 6 V ― ― 10 mA Inhibit voltage VIH IF = rated IFT ― ― 50 V Leakage in inhibited state IIH IF = rated IFT VT = Rated VDRM ― 200 600 μA Capacitance (input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF Isolation resistance RS VS = 500 V 1×10 12 10 14 ― Ω Isolation voltage BVS AC, 1 minute 4000 ― ― Vrms AC, 1 second, in oil ― 10000 ― DC, 1 minute, in oil ― 10000 ― Vdc |
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