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TLP666L-S Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor

Il numero della parte TLP666L-S
Spiegazioni elettronici  TOSHIBA Photocoupler GaAs IRED and Photo?뭈riac
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP666L-S Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor

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TLP666L(S)
2014-09-01
2
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Forward current
IF
50
mA
Forward current derating (Ta ≥ 53°C)
∆IF /°C
−0.7
mA /°C
Peak forward current (100 μs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
Off-state output terminal voltage
VDRM
800
V
On-state RMS current
Ta=25°C
IT(RMS)
100
mA
Ta=70°C
50
On-state current derating (Ta ≥ 25°C)
∆IT / °C
−1.1
mA /°C
Peak on-state current (100 μs pulse, 120 pps)
ITP
2
A
Peak nonrepetitive surge current (Pw=10 ms)
ITSM
1.2
A
Junction temperature
Tj
115
°C
Storage temperature range
Tstg
−55 to 125
°C
Operating temperature range
Topr
−40 to 100
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Isolation voltage (AC,1 minute, R.H. ≤ 60%)
(Note 1)
BVS
5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
(Note 1) Device considered a two terminal device: Pins1, 2 and 3 shorted together and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min
Typ.
Max
Unit
Supply voltage
VAC
240
Vac
Forward current
IF
15
20
25
mA
Peak on-state current
ITP
1
A
Operating temperature
Topr
−25
85
°C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.


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