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TLP7920F Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor

Il numero della parte TLP7920F
Spiegazioni elettronici  Photocouplers Optically Isolation Amplifiers
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP7920F Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor

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TLP7920,TLP7920F
4
10.
10.
10.
10. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
10.1.
10.1.
10.1.
10.1. DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, T
DC Characteristics (Unless otherwise specified, Taaaa = -40 to 105
= -40 to 105
= -40 to 105
= -40 to 105 
,,,,
V
V
V
VDD1
DD1
DD1
DD1
= 4.5 to 5.5 V, V
= 4.5 to 5.5 V, V
= 4.5 to 5.5 V, V
= 4.5 to 5.5 V, VDD2
DD2
DD2
DD2
= 3.0 to 5.5 V, V
= 3.0 to 5.5 V, V
= 3.0 to 5.5 V, V
= 3.0 to 5.5 V, VIN+
IN+
IN+
IN+
= -200 to 200 mV, V
= -200 to 200 mV, V
= -200 to 200 mV, V
= -200 to 200 mV, VIN-
IN-
IN-
IN-
= 0 V)
= 0 V)
= 0 V)
= 0 V)
Characteristics
Input offset voltage
Input offset voltage drift vs ambient
temperature
Input offset voltage drift vs input side
supply voltage
Gain (Rank B)
Gain (Rank A)
Gain (None)
Gain drift vs ambient temperature
VOUT non-linearity (±200 mV)
VOUT non-linearity (±200 mV) drift vs
ambient temperature
VOUT non-linearity (±100 mV)
High-level output voltage
Low-level output voltage
Input common-mode rejection ratio
Input bias current
Input side supply current (VDD1)
Output side supply current (VDD2)
Equivalent input resistance
Symbol
VOS
|dVOS/dTa|
|dVOS/dVDD1|
G0
G1
G3
|dG/dTa|
NL200
|dNL200/dTa|
NL100
VOH
VOL
CMRRIN
IIN+
IDD1
IDD2
RIN
Note
(Note 1)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Test Condition
Ta = 25 
Ta = 25 
Ta = 25 
Ta = 25 
VIN+ = -200 to 200 mV,
Ta = 25 
VIN+ = -100 to 100 mV,
Ta = 25 
VIN+ = 400 mV, Ta = 25 
VIN+ = -400 mV, Ta = 25 
VIN+ = 0 V, Ta = 25 
VIN+ = 0 V
VIN+ = 0 V
Min
-0.7
-1
Typ.
0.73
3
120
0.00012
0.04
0.00007
0.02
2.497
0.0009
80
-0.055
8.6
6.2
78
Max
2.1
10
0.13
0.06
12
10
Unit
mV
µV/
µV/V
V/V
V/V/
%
%/
%
V
dB
µA
mA
mA
kΩ
Note 1: See Chapter 10.1.1 for gain rank values.
Note 2: The slope of the optimum line is derived by the method of least squares between differential input voltage
(VIN+ - VIN-) and differential output voltage (VOUT+ - VOUT-). Nonlinearity is defined as a fraction of the half of
the peak-to-peak value of differential output voltage deviation divided by the full-scale differential output voltage
(OVR).
10.1.1.
10.1.1.
10.1.1.
10.1.1. Gain Rank (Note) (Unless otherwise specified, T
Gain Rank (Note) (Unless otherwise specified, T
Gain Rank (Note) (Unless otherwise specified, T
Gain Rank (Note) (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Rank
None (±3 %)
Rank A (±1 %)
Rank B (±0.5 %)
Gain Rank Marking
Blank, A, B
A, B
B
(Min)
7.95
8.12
8.16
Gain
(Typ.)
8.2
8.2
8.2
(Max)
8.44
8.28
8.24
Unit
V/V
Note:
The gain is defined as the slope of the optimum line derived by the method of
least squares between differential input voltage (VIN+ - VIN-) and differential output
voltage (VOUT+ - VOUT-) in the recommended voltage range.
Note:
Specify both the part number and a rank in this format when ordering.
Example: TLP7920(B
For safety standard certification, however, specify the part number alone.
Example: TLP7920(B → TLP7920
2015-09-10
Rev.1.0
©2015 Toshiba Corporation


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