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TLP797J Scheda tecnica(PDF) 2 Page - Toshiba Semiconductor |
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TLP797J Scheda tecnica(HTML) 2 Page - Toshiba Semiconductor |
2 / 2 page TLP797J 2014-09-22 2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit LED Forward current IF 50 mA Forward current derating (Ta ≥ 25°C) ΔIF/°C −0.5 mA/°C Peak forward current (100 μs pulse, 100 pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Detector Off-state output terminal voltage VOFF 600 V On-state current A connection ION 100 mA B connection 100 C connection 200 On-state current derating (Ta ≥ 25°C) A connection ΔION/°C −1.0 mA/°C B connection −1.0 C connection −2.0 Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 85 °C Lead soldering temperature (10 s) Tsol 260 °C Isolation voltage (AC, 1 minute, R.H. ≤ 60%) (Note 1) BVS 5000 Vrms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device considered a two-terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage VDD ⎯ ⎯ 480 V Forward current IF 7.5 15 25 mA On-state current ION ⎯ ⎯ 100 mA Operating temperature Topr −20 ⎯ 65 °C Note: |
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