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TLP715 Scheda tecnica(PDF) 8 Page - Toshiba Semiconductor

Il numero della parte TLP715
Spiegazioni elettronici  Isolated Bus Drivers High Speed Line Receivers Microprocessor System Interfaces
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP715 Scheda tecnica(HTML) 8 Page - Toshiba Semiconductor

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TLP715
2014-09-01
8
Figure
1 Partial discharge measurement procedure according to EN60747
Destructive test for qualification and sampling tests.
Method A
(for type and sampling tests,
destructive tests)
t1, t2
t3, t4
tp(Measuring time for
partial discharge)
tb
tini
V
VINITIAL(8kV)
Vpr(1335V for TLPxxx)
(1710V for TLPxxxF)
VIORM(890V for TLPxxx)
(1140V for TLPxxxF)
0
t1
tini
t3
t2
tP
tb
t4
t
= 1 to 10 s
= 1 s
= 10 s
= 12 s
= 60 s
tP
Vpr(1670V for TLPxxx)
(2140V for TLPxxxF)
VIORM(890V for TLPxxx)
(1140V for TLPxxxF)
V
t
t3
t4
tb
Figure
2 Partial discharge measurement procedure according to EN60747
Non-destructive test for100% inspection.
Method B
(for sample test,non-
destructive test)
t3, t4
tp(Measuring time for
partial discharge)
tb
= 0.1 s
= 1 s
= 1.2 s
500
400
300
200
100
0
0
25
50
75
100
125
150
175
1000
800
600
400
200
0
Ta (°C)
Isi
Psi →
Isi
(mA)
Psi
(mW)
Figure
3 Dependency of maximum safety ratings on ambient temperature (for photodetector
failure)


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