TLP170J

2014-09-01

2

Characteristics

Symbol

Rating

Unit

LED

Forward current

50

mA

Forward current derating (Ta

≥ 25°C)

−0.5

mA/°C

Pulse forward current

(100

μs pulse, 100 pps)

1

A

Reverse voltage

5

V

Junction temperature

125

°C

Detector

OFF-state output terminal voltage

600

V

ON-state current

90

mA

ON-state current derating (Ta

≥ 25°C)

−0.9

mA/°C

Junction temperature

125

°C

Storage temperature range

−55~125

°C

Operating temperature range

−40~85

°C

Lead soldering temperature (10 s)

260

°C

Isolation voltage (AC, 1 minute, R.H.

≤ 60%) (Note 1)

1500

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if

the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Note 1: Device considered a two-terminal device: LED side pins shorted together, and detector side pins shorted

together.

Recommended Operating Conditions

Characteristics

Symbol

Min

Typ.

Max

Unit

Supply voltage

⎯

⎯

480

V

Forward current

⎯

2

25

mA

ON-state current

⎯

⎯

70

mA

Operating temperature

−20

⎯

65

°C

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this

product, please confirm specified characteristics shown in this document.

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

LED

Forward voltage

1.0

1.15

1.3

V

Reverse current

⎯

⎯

10

μA

Capacitance

V

= 0, f = 1 MHz

⎯

30

⎯

pF

Detector

OFF-state current

⎯

1

1000

nA

Capacitance

V

= 0, f = 1 MHz

⎯

75

⎯

pF