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TLP705A Scheda tecnica(PDF) 4 Page - Toshiba Semiconductor

Il numero della parte TLP705A
Spiegazioni elettronici  Isolation voltage - 5000 Vrms (min)
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Produttore elettronici  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TLP705A Scheda tecnica(HTML) 4 Page - Toshiba Semiconductor

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TLP705A
4
9.
9.
9.
9. Electrical Characteristics (Note)
Electrical Characteristics (Note)
Electrical Characteristics (Note)
Electrical Characteristics (Note)
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, T
(Unless otherwise specified, Taaaa = -40 to 100
= -40 to 100
= -40 to 100
= -40 to 100 
))))
Characteristics
Input forward voltage
Input forward voltage
temperature coefficient
Input reverse current
Input capacitance
Peak high-level output current
Peak low-level output current
High-level output voltage
Low-level output voltage
High-level supply current
Low-level supply current
Threshold input current (L/H)
Threshold input voltage (H/L)
Supply voltage
Symbol
VF
∆VF/∆Ta
IR
Ct
IOPH
IOPL
VOH
VOL
ICCH
ICCL
IFLH
VFHL
VCC
Note
(Note 1)
(Note 1)
Test
Circuit
Fig.
12.1.1
Fig.
12.1.2
Fig.
12.1.3
Fig.
12.1.4
Fig.
12.1.5
Fig.
12.1.6
Test Condition
IF = 10 mA, Ta = 25 
IF = 10 mA
VR = 5 V, Ta = 25 
V = 0 V, f = 1 MHz, Ta = 25 
IF = 10 mA, VCC = 15 V,
V6-5 = 4 V
IF = 10 mA, VCC = 15 V,
V6-5 = 10 V
IF = 0 mA, VCC = 15 V,
V5-4 = 2 V
IF = 0 mA, VCC = 15 V,
V5-4 = 10 V
IF = 10 mA, VCC = 10 V,
IO = -100 mA
VF = 0.8 V, VCC = 10 V,
IO = 100 mA
IF = 10 mA, VCC = 10 to 30 V,
VO = Open
IF = 0 mA, VCC = 10 to 30 V,
VO = Open
VCC = 15 V, VO > 1 V
VCC = 15 V, VO < 1 V
Min
1.40
0.2
0.4
6.0
0.8
10
Typ.
1.57
-1.8
60
-0.32
-0.6
0.32
0.6
8.5
0.35
Max
1.80
10
-0.2
-0.4
1.0
3.0
3.0
7.5
30
Unit
V
mV/
µA
pF
A
V
mA
V
Note:
All typical values are at Ta = 25 .
Note:
This device is designed for low power consumption, making it more sensitive to ESD than its predecessors.
Extra care should be taken in the design of circuitry and pc board implementation to avoid ESD problems.
Note 1: IO application time ≤ 50 µs, single pulse.
10.
10.
10.
10. Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, T
Isolation Characteristics (Unless otherwise specified, Taaaa = 25
= 25
= 25
= 25 
))))
Characteristics
Total capacitance (input to output)
Isolation resistance
Isolation voltage
Symbol
CS
RS
BVS
Note
(Note 1)
(Note 1)
(Note 1)
Test Conditions
VS = 0 V, f = 1 MHz
VS = 500 V, R.H. ≤ 60 %
AC, 60 s
AC, 1 s in oil
DC, 60 s in oil
Min
1 × 1012
5000
Typ.
1.0
1014
10000
10000
Max
Unit
pF
Vrms
Vdc
Note 1: This device is considered as a two-terminal device: Pins 1, 2 and 3 are shorted together, and pins 4, 5 and 6
are shorted together.
2015-12-25
Rev.5.0
©2015 Toshiba Corporation


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