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LM3262TMX Scheda tecnica(PDF) 5 Page - Texas Instruments

Il numero della parte LM3262TMX
Spiegazioni elettronici  Adjustable, Step-Down DC-DC Converter With Auto Bypass
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LM3262
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SNVS875O – AUGUST 2012 – REVISED DECEMBER 2015
6.5 Electrical Characteristics
Unless otherwise noted, all specifications apply to the Typical Application Circuit with: VIN = EN = 3.6 V and
BPEN = NC = 0 V. All typical (TYP) limits apply for TA = TJ = 25°C, and all minimum (MIN) and maximum (MAX) apply over
the full operating ambient temperature range (
−30°C ≤ TA = TJ ≤ +90°C), unless otherwise specified.
(1) (2) (3)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Feedback voltage at minimum
VFB, MIN
PWM mode, VCON = 0.16 V(4)
0.38
0.4
0.42
V
setting
Feedback voltage at maximum
VFB, MAX
PWM mode, VCON = 1.44 V, VIN = 4 V
3.55
3.6
3.65
V
setting
ISHDN
Shutdown supply current
EN = SW = VCON = FB = BPEN = NC =0 V(5)
0.1
1
µA
PWM mode, No switching
IQ_PWM
PWM mode quiescent current
650
795
µA
VCON = 0.13 V, FB = 1 V(6)
EN = VIN, BPEN = NC = 0V, SW = tri state
IQ_SLEEP
Low-power sleep mode
25
µA
VCON < 0.8 V, FB = 2.05 V(7)
ECO mode, No switching
IQ_ECO
ECO mode quiescent current
60
µA
VCON = 0.8 V, FB = 2.05 V(6)
ILIM,P
PFET switch peak current limit See(8)
1300
1450
1600
mA
BPFET switch peak current
ILIM, BP
VFB = VIN – 1 V
310
400
mA
limit
ƒOSC
Internal oscillator frequency
5.7
6
6.3
MHz
EN, BPEN logic high input
VIH
1.2
V
threshold
EN, BPEN logic low input
VIL
0.4
V
threshold
Gain
VCON to VOUT gain
0.16 V
≤ VCON ≤ 1.44 V(9)
2.5
V/V
IVCON
VCON pin leakage current
VCON = 1 V
–1
1
µA
Auto bypass detection
VCON = 1.2 V (VOUT-SET = 3 V)
VBP, NEG
165
200
235
mV
negative threshold
VIN = 3.2 V, RL = 6 Ω (IOUT = 500 mA)
(10)
Auto bypass detection positive
VCON = 1.2 V (VOUT-SET = 3 V)
VBP, NEG
215
250
285
mV
threshold
VIN = 3.25 V, RL = 6 Ω (IOUT = 500 mA)
(11)
IBP, SLEW
BPEN = High, Forced bypass
1600
mA
(1)
All voltages are with respect to the potential at the GND pins.
(2)
Minimum and maximum limits are specified by design, test, or statistical analysis.
(3)
The parameters in the electrical characteristics table are tested under open loop conditions at VIN = 3.6 V unless otherwise specified.
For performance over the input voltage range and closed-loop results, refer to Typical Characteristics.
(4)
All 0.4-V VOUT specifications are at steady-state only.
(5)
Shutdown current includes leakage current of PFET.
(6)
Iq specified here is when the device is not switching. For operating input current at no load, refer to Typical Characteristics.
(7)
FB has 200 k
Ω to SGND.
(8)
Current limit is built-in, fixed, and not adjustable.
(9)
Care should be taken to keep the VCON pin voltage less than the VIN pin voltage as this can place the device into a manufacturing test
mode.
(10) Entering bypass mode, VIN is compared to the programmed output voltage (2.5 × VCON). When VIN − (2.5 × VCON) falls below
VBP,NEG longer than TBP,NEG, the bypass FET turns on, and the switching FET turns on.
(11) Bypass mode is exited when VIN − (2.5 × VCON) exceeds VBP,POS longer than TBP,POS, and PWM mode resumes. The hysteresis for
the bypass detection threshold VBP,POS − VBP,NEG is always positive and is approximately 50 mV.
Copyright © 2012–2015, Texas Instruments Incorporated
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