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CSD17577Q3AT Scheda tecnica(PDF) 6 Page - Texas Instruments |
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CSD17577Q3AT Scheda tecnica(HTML) 6 Page - Texas Instruments |
6 / 13 page 0 5 10 15 20 25 30 35 40 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) G001 0.1 1 10 100 1000 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) 10us 100us 1ms 10ms DC G001 10 100 0.01 0.1 1 TAV - Time in Avalanche (mS) TC = 25ºC TC = 125ºC G001 0.6 0.8 1 1.2 1.4 1.6 1.8 −75 −50 −25 0 25 50 75 100 125 150 175 TC - Case Temperature (ºC) VGS = 4.5V VGS = 10V G001 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 VSD − Source-to-Drain Voltage (V) TC = 25°C TC = 125°C G001 CSD17577Q3A SLPS515A – AUGUST 2014 – REVISED JANUARY 2016 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) ID = 16 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage Single Pulse, Max RθJC = 3.0°C/W Figure 10. Maximum Safe Operating Area Figure 11. Single Pulse Unclamped Inductive Switching Figure 12. Maximum Drain Current vs Temperature 6 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated Product Folder Links: CSD17577Q3A |
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