2N5018_13 datasheet(1/2 Pages) LINEAR

Il numero della parte	2N5018

Spiegazioni elettronici	SINGLE P-CHANNEL JFET SWITCH

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Produttore elettronici	LINEAR [Linear Integrated Systems]

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Linear Integrated Systems

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Doc 201153 05/14/2014 Rev#A4 ECN# 2N5018

FEATURES

DIRECT REPLACEMENT FOR SILICONIX 2N5018

ZERO OFFSET VOLTAGE

LOW ON RESISTANCE

75Ω

ABSOLUTE MAXIMUM RATINGS1

@ 25 °C (unless otherwise stated)

Maximum Temperatures

Storage Temperature

-55 to 150°C

Junction Operating Temperature

-55 to 150°C

Maximum Power Dissipation

Continuous Power Dissipation3

500mW

Maximum Currents

Gate Current

-10mA

Maximum Voltages

Gate to Drain

30V

Gate to Source

30V

STATIC ELECTRICAL CHARACERISTICS @25ºC (unless otherwise stated)

SYM.

CHARACTERISTIC

TYP

2N5018

2N5019

UNITS

CONDITIONS

MIN

MAX

MIN

MAX

BVGSS

Gate to Source Breakdown Voltage

30

V

IG = 1µA, VDS = 0V

VGS(off)

Gate to Source Cutoff Voltage

10

5

VDS = -15V, ID = -1µA

VDS(on)

Drain to Source On Voltage

-0.5

VGS = 0V, ID = -6mA

-0.5

VGS = 0V, ID = -3mA

IDSS

Drain to Source Saturation Current2

-10

-5

mA

VDS = -20V, VGS = 0V

IGSS

Gate Leakage Current

2

nA

VGS = 15V, VDS = 0V

ID(off)

Drain Cutoff Current

-10

VDS = -15V, VGS = 12V

-10

µA

VDS = -15V, VGS = 7V

IDGO

Drain Reverse Current

-2

nA

VDG = -15V, IS = 0A

rDS(on)

Drain to Source On Resistance

75

150

Ω

ID = -1mA, VGS = 0V

2N5018 SERIES

SINGLE P-CHANNEL

JFET SWITCH

TO-18

TOP VIEW

D

S

G

and Case

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