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CSD19506KTTT Scheda tecnica(PDF) 1 Page - Texas Instruments

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Il numero della parte CSD19506KTTT
Spiegazioni elettronici  80 V N-Channel NexFET Power MOSFET
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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CSD19506KTTT Scheda tecnica(HTML) 1 Page - Texas Instruments

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VGS - Gate-to-Source Voltage (V)
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
D007
TC = 25°C, I D = 100 A
TC = 125°C, I D = 100 A
Qg - Gate Charge (nC)
0
20
40
60
80
100
120
140
0
1
2
3
4
5
6
7
8
9
10
D004
ID = 100 A
VDS = 40 V
Gate
(Pin 1)
Drain (Pin 2)
Source (Pin 3)
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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
CSD19506KTT
SLPS586 – MARCH 2016
CSD19506KTT 80 V N-Channel NexFET™ Power MOSFET
1
1 Features
1
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb-Free Terminal Plating
RoHS Compliant
Halogen Free
D2PAK Plastic Package
2 Applications
Secondary Side Synchronous Rectifier
Motor Control
3 Description
This 80-V, 2.0-m
Ω, D2PAK (TO-263) NexFET™
power MOSFET is designed to minimize losses in
power conversion applications.
SPACE
.
Product Summary
TA = 25°C
TYPICAL VALUE
UNIT
VDS
Drain-to-Source Voltage
80
V
Qg
Gate Charge Total (10 V)
120
nC
Qgd
Gate Charge Gate to Drain
20
nC
RDS(on)
Drain-to-Source On Resistance
VGS = 6 V
2.2
m
VGS = 10 V
2.0
m
VGS(th)
Threshold Voltage
2.5
V
Ordering Information(1)
DEVICE
QTY
MEDIA
PACKAGE
SHIP
CSD19506KTT
500
13-Inch
Reel
D2PAK Plastic Package
Tape &
Reel
CSD19506KTTT
50
(1) For all available packages, see the orderable addendum at
the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C
VALUE
UNIT
VDS
Drain-to-Source Voltage
80
V
VGS
Gate-to-Source Voltage
±20
V
ID
Continuous Drain Current (Package limited)
200
A
Continuous Drain Current (Silicon limited),
TC = 25°C
291
Continuous Drain Current (Silicon limited),
TC = 100°C
206
IDM
Pulsed Drain Current (1)
400
A
PD
Power Dissipation
375
W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 175
°C
EAS
Avalanche Energy, single pulse
ID = 129 A, L = 0.1 mH, RG = 25 Ω
832
mJ
(1) Max RθJC = 0.4°C/W, pulse duration ≤100 μs, duty cycle ≤1%
RDS(on) vs VGS
Gate Charge


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