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LM3420M5-8.4 Scheda tecnica(PDF) 6 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Il numero della parte LM3420M5-8.4
Spiegazioni elettronici  Lithium-Ion Battery Charge Controller
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Produttore elettronici  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM3420M5-8.4 Scheda tecnica(HTML) 6 Page - National Semiconductor (TI)

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LM3420-16.8
Electrical Characteristics
Specifications with standard type face are for T
J = 25˚C, and those with boldface type apply over full Operating Temperature
Range. Unless otherwise specified, V(IN) = V
REG,VOUT = 1.5V.
Symbol
Parameter
Conditions
Typical
LM3420A-16.8
LM3420-16.8
Units
(Note 4)
Limit
Limit
(Limits)
(Note 5)
(Note 5)
V
REG
Regulation Voltage
I
OUT = 1 mA
16.8
V
16.884/16.968
16.968/17.136
V(max)
16.716/16.632
16.632/16.464
V(min)
Regulation Voltage
I
OUT =1 mA
±0.5/±1
±1/±2
%(max)
Tolerance
I
q
Quiescent Current
I
OUT = 1 mA
85
µA
110/115
125/150
µA(max)
G
m
Transconductance
20 µA
≤ I
OUT ≤ 1 mA
3.3
mA/mV
∆I
OUT/∆VREG
V
OUT = 15V
0.8/0.4
0.7/0.35
mA/mV(min)
1mA
≤ I
OUT ≤ 15 mA
6.0
mA/mV
V
OUT = 15V
2.9/0.9
2.5/0.75
mA/mV(min)
A
V
Voltage Gain
1V
≤ V
OUT ≤ VREG − 1.2V (−1.3)
1000
V/V
∆V
OUT/∆VREG
R
L =1 kΩ (Note 6)
550/250
450/200
V/V(min)
1V
≤ V
OUT ≤ VREG − 1.2V (−1.3)
3500
V/V
R
L =15 kΩ
1200/750
1000/650
V/V(min)
V
SAT
Output Saturation
V(IN) = V
REG +100 mV
1.0
V
(Note 7)
I
OUT = 15 mA
1.2/1.3
1.2/1.3
V(max)
I
L
Output Leakage
V(IN) = V
REG −100 mV
0.1
µA
Current
V
OUT = 0V
0.5/1.0
0.5/1.0
µA(max)
R
f
Internal Feedback
392
k
Resistor (Note 8)
490
490
k
Ω(max)
294
294
k
Ω(min)
E
n
Output Noise
Voltage
I
OUT = 1 mA, 10 Hz ≤ f ≤ 10 kHz
280
µV
RMS
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is in-
tended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The
guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed
test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (junction to am-
bient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax =(TJmax −TA)/θJA or the number
given in the Absolute Maximum Ratings, whichever is lower. The typical thermal resistance (
θJA) when soldered to a printed circuit board is approximately 306˚C/W
for the M5 package.
Note 3: The human body model is a 100 pF capacitor discharged through a 1.5 k
Ω resistor into each pin.
Note 4: Typical numbers are at 25˚C and represent the most likely parametric norm.
Note 5: Limits are 100% production tested at 25˚C. Limits over the operating temperature range are guaranteed through correlation using Statistical Quality Control
(SQC) methods. The limits are used to calculate National’s Averaging Outgoing Quality Level (AOQL).
Note 6: Actual test is done using equivalent current sink instead of a resistor load.
Note 7: VSAT = V(IN) − VOUT, when the voltage at the IN pin is forced 100 mV above the nominal regulating voltage (VREG).
Note 8: See Applications and Typical Performance Characteristics sections for information on this resistor.
www.national.com
6


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