Motore di ricerca datesheet componenti elettronici |
|
BF1101R Scheda tecnica(PDF) 3 Page - NXP Semiconductors |
|
BF1101R Scheda tecnica(HTML) 3 Page - NXP Semiconductors |
3 / 15 page 1999 May 14 3 NXP Semiconductors Product specification N-channel dual-gate MOS-FETs BF1101; BF1101R; BF1101WR LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature of the soldering point of the source lead. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 7V ID drain current 30 mA IG1 gate 1 current 10 mA IG2 gate 2 current 10 mA Ptot total power dissipation Ts 110 C; note 1 200 mW Tstg storage temperature 65 +150 C Tj operating junction temperature +150 C SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 200 K/W Fig.4 Power derating curve. handbook, halfpage 0 50 100 200 250 0 200 MGL615 150 150 100 50 Ptot (mW) Ts (°C) |
Codice articolo simile - BF1101R |
|
Descrizione simile - BF1101R |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |