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Motore di ricerca datesheet componenti elettronici |
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FSB50760SFS Scheda tecnica(PDF) 5 Page - Fairchild Semiconductor |
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FSB50760SFS Scheda tecnica(HTML) 5 Page - Fairchild Semiconductor |
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5 / 10 page  ©2012 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com FSB50760SFS Rev. 1.1 Recommended Operating Condition Figure 2. Built-in Bootstrap Diode Characteristics (Typical) Symbol Parameter Conditions Min. Typ. Max. Unit VPN Supply Voltage Applied Between P and N - 300 450 V VCC Control Supply Voltage Applied Between VCC and COM 13.5 15.0 16.5 V VBS High-Side Bias Voltage Applied Between VB and VS 13.5 15.0 16.5 V VIN(ON) Input ON Threshold Voltage Applied Between IN and COM 3.0 - VCC V VIN(OFF) Input OFF Threshold Voltage 0 - 0.6 V tdead Blanking Time for Preventing Arm-Short VCC = VBS = 13.5 ~ 16.5 V, TJ 150°C 1.0 - - s fPWM PWM Switching Frequency TJ 150°C - 20 - kHz 01 23 456 78 9 10 11 12 13 14 15 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 Built-in Bootstrap Diode V F -I F Characteristic V F [V] Tc=25°C |
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