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IRF640B Scheda tecnica(PDF) 1 Page - Kersemi Electronic Co., Ltd.

Il numero della parte IRF640B
Spiegazioni elettronici  200V N-Channel MOSFET
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Produttore elettronici  KERSEMI [Kersemi Electronic Co., Ltd.]
Homepage  http://www.kersemi.com
Logo KERSEMI - Kersemi Electronic Co., Ltd.

IRF640B Scheda tecnica(HTML) 1 Page - Kersemi Electronic Co., Ltd.

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IRF640B/IRFS640B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
• 18A, 200V, RDS(on) = 0.18Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 45 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings T
C = 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
IRF640B
IRFS640B
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current
- Continuous (TC = 25°C)
18
18 *
A
- Continuous (TC = 100°C)
11.4
11.4 *
A
IDM
Drain Current
- Pulsed
(Note 1)
72
72 *
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
250
mJ
IAR
Avalanche Current
(Note 1)
18
A
EAR
Repetitive Avalanche Energy
(Note 1)
13.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
PD
Power Dissipation (TC = 25°C)
139
43
W
- Derate above 25°C
1.11
0.35
W/°C
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
°C
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C
Symbol
Parameter
IRF640B
IRFS640B
Units
RθJC
Thermal Resistance, Junction-to-Case
0.9
2.89
°C/W
RθCS
Thermal Resistance, Case-to-Sink
0.5
--
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
62.5
°C/W
TO-220
IRF Series
G
S
D
S
D
G
TO-220F
IRFS Series
G
S
D
www.kersemi.com


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