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SPI80N10L Scheda tecnica(PDF) 3 Page - Infineon Technologies AG |
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SPI80N10L Scheda tecnica(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2002-08-14 Page 3 Preliminary data SPI80N10L SPP80N10L,SPB80N10L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max, ID=58A 26 52 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 3630 4540 pF Output capacitance Coss - 640 800 Reverse transfer capacitance Crss - 345 430 Turn-on delay time td(on) VDD=50V, VGS=10V, ID=80A, RG=1.6 - 14 21 ns Rise time tr - 60 90 Turn-off delay time td(off) - 82 123 Fall time tf - 20 30 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=80A - 14 21 nC Gate to drain charge Qgd - 65 98 Gate charge total Qg VDD=80V, ID=80A, VGS=0 to 10V - 160 240 Gate plateau voltage V(plateau) VDD=80V, ID=80A - 4.2 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 80 A Inv. diode direct current, pulsed ISM - - 320 Inverse diode forward voltage VSD VGS=0V, IF=80A - 0.9 1.3 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 95 140 ns Reverse recovery charge Qrr - 330 500 nC |
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