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SPI80N10L Scheda tecnica(PDF) 3 Page - Infineon Technologies AG

Il numero della parte SPI80N10L
Spiegazioni elettronici  SIPMOS Power-Transistor
Download  8 Pages
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI80N10L Scheda tecnica(HTML) 3 Page - Infineon Technologies AG

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2002-08-14
Page 3
Preliminary data
SPI80N10L
SPP80N10L,SPB80N10L
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
gfs
VDS2*ID*RDS(on)max,
ID=58A
26
52
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f=1MHz
-
3630
4540
pF
Output capacitance
Coss
-
640
800
Reverse transfer capacitance
Crss
-
345
430
Turn-on delay time
td(on)
VDD=50V, VGS=10V,
ID=80A, RG=1.6
-
14
21
ns
Rise time
tr
-
60
90
Turn-off delay time
td(off)
-
82
123
Fall time
tf
-
20
30
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=80V, ID=80A
-
14
21
nC
Gate to drain charge
Qgd
-
65
98
Gate charge total
Qg
VDD=80V, ID=80A,
VGS=0 to 10V
-
160
240
Gate plateau voltage
V(plateau) VDD=80V, ID=80A
-
4.2
-
V
Reverse Diode
Inverse diode continuous
forward current
IS
TC=25°C
-
-
80
A
Inv. diode direct current, pulsed ISM
-
-
320
Inverse diode forward voltage
VSD
VGS=0V, IF=80A
-
0.9
1.3
V
Reverse recovery time
trr
VR=50V, IF=lS,
diF/dt=100A/µs
-
95
140
ns
Reverse recovery charge
Qrr
-
330
500
nC


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