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SPI80N06S2-08 Scheda tecnica(PDF) 5 Page - Infineon Technologies AG |
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SPI80N06S2-08 Scheda tecnica(HTML) 5 Page - Infineon Technologies AG |
5 / 8 page 2003-05-09 Page 5 SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VDS 0 20 40 60 80 100 120 140 160 A 190 SPP80N06S2-08 VGS [V] a a 4.5 b b 4.8 c c 5.0 d d 5.2 e e 5.5 f f 5.8 g g 6.0 h h 6.5 i Ptot = 215W i 10.0 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 20 40 60 80 100 A 130 ID 0 2 4 6 8 10 12 14 16 18 20 22 m Ω 26 SPP80N06S2-08 VGS [V] = d d 5.2 e e 5.5 f f 5.8 g g 6.0 h h 6.5 i i 10.0 7 Typ. transfer characteristics ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 80 µs 0 1 2 3 4 5 V 7 VGS 0 20 40 60 80 100 120 A 160 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: gfs 0 20 40 60 80 A 110 ID 0 10 20 30 40 50 60 S 80 |
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