Motore di ricerca datesheet componenti elettronici |
|
SPI21N10 Scheda tecnica(PDF) 3 Page - Infineon Technologies AG |
|
SPI21N10 Scheda tecnica(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2002-01-31 Page 3 Preliminary data SPI21N10 SPP21N10,SPB21N10 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max , ID=15.0A 6.5 12.4 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 650 865 pF Output capacitance Coss - 140 186 Reverse transfer capacitance Crss - 80 120 Turn-on delay time td(on) VDD=50V, VGS=10V, ID=21A, RG=13 - 10 15 ns Rise time tr - 56 84 Turn-off delay time td(off) - 37 55 Fall time tf - 23 35 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=21A - 3.9 5.2 nC Gate to drain charge Qgd - 15.5 23.3 Gate charge total Qg VDD=80V, ID=21A, VGS=0 to 10V - 28.9 38.4 Gate plateau voltage V(plateau) VDD=80V, ID=21A - 6.2 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 21 A Inverse diode direct current, pulsed ISM - - 84 Inverse diode forward voltage VSD VGS=0V, IF=21A - 0.94 1.25 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 65 81.5 ns Reverse recovery charge Qrr - 153 192 nC |
Codice articolo simile - SPI21N10 |
|
Descrizione simile - SPI21N10 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |