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SPI10N10 Scheda tecnica(PDF) 3 Page - Infineon Technologies AG |
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SPI10N10 Scheda tecnica(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page 2002-01-31 Page 3 Preliminary data SPI10N10 SPP10N10,SPB10N10 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs VDS2*ID*RDS(on)max , ID=7.8A 2.6 5.8 - S Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz - 320 426 pF Output capacitance Coss - 72 96 Reverse transfer capacitance Crss - 43 65 Turn-on delay time td(on) VDD=50V, VGS=10V, ID=10.3A, RG=2.2 - 8.2 12 ns Rise time tr - 46 69 Turn-off delay time td(off) - 29 44 Fall time tf - 23 35 Gate Charge Characteristics Gate to source charge Qgs VDD=80V, ID=10.3A - 2.3 3 nC Gate to drain charge Qgd - 7.9 11.9 Gate charge total Qg VDD=80V, ID=10.3A, VGS=0 to 10V - 14.6 19.4 Gate plateau voltage V(plateau) VDD=80V, ID=10.3A - 6.4 - V Reverse Diode Inverse diode continuous forward current IS TC=25°C - - 10.3 A Inverse diode direct current, pulsed ISM - - 41.2 Inverse diode forward voltage VSD VGS=0V, IF=10.3A - 0.93 1.25 V Reverse recovery time trr VR=50V, IF=lS, diF/dt=100A/µs - 57 71 ns Reverse recovery charge Qrr - 134 167 nC |
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