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SPI10N10 Scheda tecnica(PDF) 3 Page - Infineon Technologies AG

Il numero della parte SPI10N10
Spiegazioni elettronici  SIPMOS Power-Transistor
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Produttore elettronici  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

SPI10N10 Scheda tecnica(HTML) 3 Page - Infineon Technologies AG

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2002-01-31
Page 3
Preliminary data
SPI10N10
SPP10N10,SPB10N10
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
gfs
VDS2*ID*RDS(on)max ,
ID=7.8A
2.6
5.8
-
S
Input capacitance
Ciss
VGS=0V, VDS=25V,
f=1MHz
-
320
426
pF
Output capacitance
Coss
-
72
96
Reverse transfer capacitance
Crss
-
43
65
Turn-on delay time
td(on)
VDD=50V, VGS=10V,
ID=10.3A, RG=2.2
-
8.2
12
ns
Rise time
tr
-
46
69
Turn-off delay time
td(off)
-
29
44
Fall time
tf
-
23
35
Gate Charge Characteristics
Gate to source charge
Qgs
VDD=80V, ID=10.3A
-
2.3
3
nC
Gate to drain charge
Qgd
-
7.9
11.9
Gate charge total
Qg
VDD=80V, ID=10.3A,
VGS=0 to 10V
-
14.6
19.4
Gate plateau voltage
V(plateau) VDD=80V, ID=10.3A
-
6.4
-
V
Reverse Diode
Inverse diode continuous
forward current
IS
TC=25°C
-
-
10.3
A
Inverse diode direct current,
pulsed
ISM
-
-
41.2
Inverse diode forward voltage
VSD
VGS=0V, IF=10.3A
-
0.93
1.25
V
Reverse recovery time
trr
VR=50V, IF=lS,
diF/dt=100A/µs
-
57
71
ns
Reverse recovery charge
Qrr
-
134
167
nC


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