Motore di ricerca datesheet componenti elettronici |
|
SN74VMEH22501A-EP Scheda tecnica(PDF) 3 Page - Texas Instruments |
|
|
SN74VMEH22501A-EP Scheda tecnica(HTML) 3 Page - Texas Instruments |
3 / 38 page SN74VMEH22501A-EP www.ti.com SCES625A – FEBRUARY 2005 – REVISED NOVEMBER 2015 5 Description (continued) The SN74VMEH22501A-EP device is pin-for-pin compatible to the SN74VMEH22501 device (SCES357), but operates at a wider operating temperature range. High-speed backplane operation is a direct result of the improved OEC circuitry and high drive that has been designed and tested into the VME64x backplane model. The B-port I/Os are optimized for driving large capacitive loads and include pseudo-ETL input thresholds (½ VCC ±50 mV) for increased noise immunity. These specifications support the 2eVME protocols in VME64x (ANSI/VITA 1.1) and 2eSST protocols in VITA 1.5. With proper design of a 21-slot VME system, a designer can achieve 320-MB transfer rates on linear backplanes and, possibly, 1-GB transfer rates on the VME320 backplane. All inputs and outputs are 5-V tolerant and are compatible with TTL and 5-V CMOS inputs. Active bus-hold circuitry holds unused or undriven 3A-port inputs at a valid logic state. Bus-hold circuitry is not provided on 1A or 2A inputs, any B-port input, or any control input. Use of pullup or pulldown resistors with the bus-hold circuitry is not recommended. This device is fully specified for live-insertion applications using Ioff, power-up 3-state, and BIAS VCC. The Ioff circuitry prevents damaging current to backflow through the device when it is powered off/on. The power-up 3- state circuitry places the outputs in the high-impedance state during power up and power down, which prevents driver conflict. The BIAS VCC circuitry precharges and preconditions the B-port input/output connections, preventing disturbance of active data on the backplane during card insertion or removal, and permits true live- insertion capability. When VCC is between 0 and 1.5 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 1.5 V, output-enable (OE and OEBY) inputs should be tied to VCC through a pullup resistor and output-enable (OEAB) inputs should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the drive capability of the device connected to this input. Copyright © 2005–2015, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: SN74VMEH22501A-EP |
Codice articolo simile - SN74VMEH22501A-EP |
|
Descrizione simile - SN74VMEH22501A-EP |
|
|
Link URL |
Privacy Policy |
ALLDATASHEETIT.COM |
Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |