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ACE2600B Scheda tecnica(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE2600B Scheda tecnica(HTML) 1 Page - ACE Technology Co., LTD. |
1 / 6 page ACE2600B Dual N-Channel Enhancement Mode Field Effect Transistor with ESD Protection VER 1.2 1 Description The ACE2600B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. It is ESD protected. Features V DS(V)=20V I D=6A (VGS=4.5V) R DS(ON)<22mΩ (VGS=4.5V) R DS(ON)<26mΩ (VGS=2.5V) R DS(ON)<34mΩ (VGS=1.8V) ESD Protected: 2000V Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Drain Current (Continuous) * AC TA=25 OC ID 6 A TA=70 OC 4.8 Drain Current (Pulse) * B IDM 30 Power Dissipation TA=25 OC PD 1.3 W TA=70 OC 0.8 Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC Packaging Type SOT-23-6L |
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