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STGP10M65DF2 Scheda tecnica(PDF) 3 Page - STMicroelectronics |
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3 / 18 page STGP10M65DF2 Electrical ratings DocID027352 Rev 4 3/18 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 650 V IC Continuous collector current at TC = 25 °C 20 A Continuous collector current at TC = 100 °C 10 ICP(1) Pulsed collector current 40 A VGE Gate-emitter voltage ± 20 V IF Continuous forward current at TC = 25 °C 20 A Continuous forward current at TC = 100 °C 10 IFP(1) Pulsed forward current 40 A PTOT Total dissipation at TC = 25 °C 115 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature - 55 to 175 Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 1.3 °C/W RthJC Thermal resistance junction-case diode 2.08 RthJA Thermal resistance junction-ambient 62.5 |
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