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STFI10NK60Z Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STFI10NK60Z Scheda tecnica(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STFI10NK60Z 4/13 Doc ID 018968 Rev 3 2 Electrical characteristics (Tcase = 25 °C unless otherwise specified). Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage, (VGS= 0) ID = 250 µA 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 600 V VDS = 600 V, TC= 125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ± 10 µA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 3 3.75 4.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 4.5 A 0.65 0.75 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward transconductance VDS =15 V, ID = 4.5 A - 7.8 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 1370 156 37 pF pF pF Coss eq (2) 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% Equivalent output capacitance VGS=0, VDS =0 to 480 V - 90 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=480 V, ID = 8 A VGS =10 V (see Figure 16) - 50 10 25 70 nC nC nC Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD=300 V, ID=4 A, RG=4.7 Ω, VGS=10 V (see Figure 15) - 20 20 - ns ns td(off) tf Turn-off delay time Fall time VDD=300 V, ID=4 A, RG=4.7 Ω, VGS=10 V (see Figure 15) - 55 30 - ns ns |
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