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ULN2004ADE4 Scheda tecnica(PDF) 4 Page - Texas Instruments

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Il numero della parte ULN2004ADE4
Spiegazioni elettronici  High-Voltage, High-Current Darlington Transistor Arrays
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Produttore elettronici  TI1 [Texas Instruments]
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4
ULN2002A, ULN2003A, ULN2003AI
ULQ2003A, ULN2004A, ULQ2004A
SLRS027O – DECEMBER 1976 – REVISED JANUARY 2016
www.ti.com
Product Folder Links: ULN2002A ULN2003A ULN2003AI ULQ2003A ULN2004A ULQ2004A
Submit Documentation Feedback
Copyright © 1976–2016, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to the emitter/substrate terminal E, unless otherwise noted.
6 Specifications
6.1 Absolute Maximum Ratings
at 25°C free-air temperature (unless otherwise noted)
(1)
MIN
MAX
UNIT
VCC
Collector-emitter voltage
50
V
Clamp diode reverse voltage(2)
50
V
VI
Input voltage(2)
30
V
Peak collector current, See Figure 4 and Figure 5
500
mA
IOK
Output clamp current
500
mA
Total emitter-terminal current
–2.5
A
TA
Operating free-air temperature range
ULN200xA
–20
70
°C
ULN200xAI
–40
105
ULQ200xA
–40
85
ULQ200xAT
–40
105
TJ
Operating virtual junction temperature
150
°C
Lead temperature for 1.6 mm (1/16 inch) from case for 10 seconds
260
°C
Tstg
Storage temperature
–65
150
°C
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.2 ESD Ratings
VALUE
UNIT
V(ESD)
Electrostatic
discharge
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
V
Charged device model (CDM), per JEDEC specification JESD22-C101(2)
±500
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
VCC
Collector-emitter voltage (non-V devices)
0
50
V
TJ
Junction temperature
–40
125
°C
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.4 Thermal Information
THERMAL METRIC(1)
ULx200x
UNIT
D
(SOIC)
N
(PDIP)
NS
(SO)
PW
(TSSOP)
16 PINS
16 PINS
16 PINS
16 PINS
RθJA
Junction-to-ambient thermal resistance
73
67
64
108
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
36
54
n/a
33.6
°C/W
RθJB
Junction-to-board thermal resistance
n/a
n/a
n/a
51.9
°C/W
ψJT
Junction-to-top characterization parameter
n/a
n/a
n/a
2.1
°C/W
ψJB
Junction-to-board characterization parameter
n/a
n/a
n/a
51.4
°C/W


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