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STB34N50DM2AG Scheda tecnica(PDF) 5 Page - STMicroelectronics |
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STB34N50DM2AG Scheda tecnica(HTML) 5 Page - STMicroelectronics |
5 / 15 page STB34N50DM2AG Electrical characteristics DocID028248 Rev 1 5/15 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 26 A ISDM(1) Source-drain current (pulsed) - 104 A VSD(2) Forward on voltage VGS = 0 V, ISD = 26 A - 1.6 V trr Reverse recovery time ISD = 25 A, di/dt = 100 A/µs, VDD = 100 V (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 110 ns Qrr Reverse recovery charge - 0.48 µC IRRM Reverse recovery current - 8.8 A trr Reverse recovery time ISD = 25 A, di/dt = 100 A/µs, VDD = 100 V, Tj = 150 °C (see Figure 16: "Test circuit for inductive load switching and diode recovery times") - 190 ns Qrr Reverse recovery charge - 1.52 µC IRRM Reverse recovery current - 16 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%. Table 9: Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)GSO Gate-source breakdown voltage IGS = ±250 µA, ID = 0 A ±30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry. |
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