STPSC16H065CT datasheet(2/8 Pages) STMICROELECTRONICS

Il numero della parte	STPSC16H065CT

Spiegazioni elettronici	650 V power Schottky silicon carbide diode

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Characteristics

STPSC16H065C

2/8

DocID024810 Rev 5

1

Characteristics

When the diodes 1 and 2 are used simultaneously:

T

j(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 1.35 x IF(AV) + 0.144 x IF

2

(RMS)

Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

650

V

IF(RMS)

Forward rms current

22

A

IF(AV)

Average forward current

Tc = 140 °C

(1), DC

Per diode

8

A

Tc = 135 °C

(2), DC

Per device

16

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal, Tc = 25 °C

tp = 10 ms sinusoidal, Tc = 125 °C

tp = 10 µs square, Tc = 25 °C

75

69

420

A

IFRM

Repetitive peak forward current

Tc = 140 °C

(1), T

j = 175 °C,  = 0.1

34

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature(3)

-40 to +175

°C

1.

Value based on Rth(j-c) max (per diode)

2.

Value based on Rth(j-c) max (per device)

3.

condition to avoid thermal runaway for a diode on its own heatsink

dPtot

dTj

---------------

1

Rth j

a

–



--------------------------



Table 3. Thermal resistance parameters

Symbol

Parameter

Typ.

Max.

Unit

Rth(j-c)

Junction to case

Per diode

1.3

1.6

°C/W

Per device

0.8

0.95

Rth(c)

Coupling

-

0.3

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Tests conditions

Min.

Typ.

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-7

80

µA

Tj = 150 °C

-

65

335

VF

(2)

Forward voltage drop

Tj = 25 °C

IF = 8A

-

1.56

1.75

V

Tj = 150 °C

-

1.98

2.5

1.

tp = 10 ms,  < 2%

2.

tp = 500 µs,  < 2%

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