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STPSC6H065G-TR Scheda tecnica(PDF) 2 Page - STMicroelectronics

Il numero della parte STPSC6H065G-TR
Spiegazioni elettronici  650 V power Schottky silicon carbide diode
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
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Characteristics
STPSC6H065
2/14
DocID023247 Rev 6
1
Characteristics
To evaluate the conduction losses use the following equation: P = 1.35 x IF(AV) + 0.192 x IF
2
(RMS)
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
650
V
IF(RMS) Forward rms current
22
A
IF(AV)
Average forward
current
TO-220AC, DPAK, D2PAK, Tc = 135 °C
(1), DC
6
A
TO-220AC Ins, Tc = 110 °C
(1), DC
IFSM
Surge non repetitive
forward current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
60
52
400
A
IFRM
Repetitive peak
forward current
TO-220AC, DPAK, D2PAK, Tc = 135 °C
(1), T
j = 175 °C, δ = 0.1
25
A
TO-220AC Ins, Tc = 110 °C
(1), T
j = 175 °C, δ = 0.1
Tstg
Storage temperature range
-55 to +175
°C
Tj
Operating junction temperature(2)
-40 to +175
°C
1.
Value based on Rth(j-c) max.
2.
condition to avoid thermal runaway for a diode on its own heatsink
dP tot
dTj
---------------
1
Rth j
a
()
--------------------------
<
Table 3. Thermal resistance
Symbol
Parameter
Typ. value
Max. value
Unit
Rth(j-c)
Junction to case
TO-220AC, DPAK, D2PAK
1.6
2.4
°C/W
TO-220AC Ins
2.9
4.2
Table 4. Static electrical characteristics
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
Reverse leakage current
Tj = 25 °C
VR = VRRM
-5
60
µA
Tj = 150 °C
-
50
250
VF
(2)
Forward voltage drop
Tj = 25 °C
IF = 6 A
-1.56
1.75
V
Tj = 150 °C
-
1.98
2.5
1.
tp = 10 ms, δ < 2%
2.
tp = 500 µs, δ < 2%


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