STP400N4F6 datasheet(3/11 Pages) STMICROELECTRONICS

Il numero della parte	STP400N4F6

Spiegazioni elettronici	N-channel 40 V, 120 A STripFET??VI DeepGATE?? Power MOSFET in I짼PAK and TO-220 packages

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STI400N4F6, STP400N4F6

Electrical ratings

Doc ID 023434 Rev 1

3/11

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

40

V

VGS

Gate-source voltage

± 20

V

ID

(1)

1.

Current limited by package

Drain current (continuous) at TC = 25 °C

120

A

ID

(1)

Drain current (continuous) at TC = 100 °C

120

A

IDM

(1)

Drain current (pulsed)

480

A

PTOT

Total dissipation at TC = 25 °C

300

W

Derating factor

2

W/°C

Tstg

Storage temperature

- 55 to 175

°C

Tj

Operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

0.5

°C/W

Rthj-a

Thermal resistance junction-ambient max

62.5

°C/W

Tl

Maximum lead temperature for soldering

purpose

300

°C

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