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STGB15M65DF2 Scheda tecnica(PDF) 4 Page - STMicroelectronics |
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STGB15M65DF2 Scheda tecnica(HTML) 4 Page - STMicroelectronics |
4 / 19 page Electrical characteristics STGB15M65DF2 4/19 DocID025356 Rev 2 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA 650 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 15 A 1.55 2.0 V VGE = 15 V, IC = 15 A, TJ = 125 °C 1.9 VGE = 15 V, IC = 15 A, TJ = 175 °C 2.1 VF Forward on-voltage IF = 15 A 1.7 V IF = 15 A, TJ = 125 °C 1.5 IF = 15 A, TJ = 175 °C 1.4 VGE(th) Gate threshold voltage VCE = VGE, IC = 500 µA 5 6 7 V ICES Collector cut-off current VGE = 0 V, VCE = 650 V 25 µA IGES Gate-emitter leakage current VCE = 0 V, VGE = ±20 V ±250 µA Table 5: Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V - 1250 - pF Coes Output capacitance - 80 - Cres Reverse transfer capacitance - 25 - Qg Total gate charge VCC = 520 V, IC = 15 A, VGE = 15 V (see Figure 30: " Gate charge test circuit") - 45 - nC Qge Gate-emitter charge - 11 - Qgc Gate-collector charge - 15 - |
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