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BUZ341 Scheda tecnica(PDF) 8 Page - Infineon Technologies AG |
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BUZ341 Scheda tecnica(HTML) 8 Page - Infineon Technologies AG |
8 / 8 page BUZ 341 Data Sheet 8 05.99 Avalanche energy EAS = ƒ(Tj) parameter: ID = 33 A, VDD = 50 V RGS = 25 Ω, L = 1.09 mH 20 40 60 80 100 120 ˚C 160 T j 0 100 200 300 400 500 600 mJ 800 E AS Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 50 A 0 20 40 60 80 100 120 140 nC 180 Q Gate 0 2 4 6 8 10 12 V 16 V GS DS max V 0,8 DS max V 0,2 Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) -60 -20 20 60 100 ˚C 160 T j 180 185 190 195 200 205 210 215 220 225 230 V 240 V (BR)DSS |
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