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BUZ76 Scheda tecnica(PDF) 3 Page - Infineon Technologies AG |
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BUZ76 Scheda tecnica(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page Semiconductor Group 3 07/96 BUZ 76 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 2 A gfs 2.1 3 - S Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Ciss - 430 650 pF Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Coss - 65 100 Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Crss - 25 40 Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω td(on) - 8 12 ns Rise time VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω tr - 30 45 Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω td(off) - 55 75 Fall time VDD = 30 V, VGS = 10 V, ID = 2.5 A RGS = 50 Ω tf - 30 40 |
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